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Product Detailed Parameters
- Description：TRANS NPN DARL 80V 8A TO66
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：8:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：3V @ 80mA, 8A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 4A, 3V
- Power - Max：75 W
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66 (TO-213AA)
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Overview
The 2N6301E3 is an NPN silicon power bipolar junction transistor manufactured by Microchip Technology. It is designed for through-hole mounting in the TO-213AA package. The device supports a maximum collector-emitter voltage of 80 V and a continuous collector current of 8 A. It features a power dissipation rating of 75 W and operates within a temperature range of -55°C to +200°C. The component includes lead-free plating, indicated by the E3 suffix, and offers a DC current gain ranging from 100 to 18000.
Feature Summary
- High power handling capability with 75 W dissipation rating
- Extended thermal operation up to 200°C junction temperature
- Lead-free compliant construction
Applications
- Power switching circuits
- Linear regulation applications
- General-purpose amplification
Procurement Notes
Verify the specific revision status against the latest Product Change Notification (PCN) dated January 23, 2024, as manufacturing parameters may have been updated. Confirm that the TO-213AA package dimensions match your PCB footprint requirements. Ensure the procurement channel provides original manufacturer documentation to validate the lead-free E3 specification and RoHS compliance status before finalizing orders.
Selection Notes
Select this component when high current capacity and robust thermal performance are required in a through-hole configuration. The wide current gain range necessitates careful biasing design to ensure stable operation across different units. Consider the 80 V voltage limit relative to your circuit's peak transient voltages. The TO-213AA package requires adequate heatsinking to maintain safe operating temperatures under full load conditions.
Part Context
This part belongs to Microchip's legacy discrete semiconductor portfolio, continuing production of standard military-grade compatible specifications. The 2N6301 series represents a classic high-power NPN transistor architecture widely used in industrial and aerospace electronics. The E3 designation confirms environmental compliance without altering the electrical characteristics defined in the original datasheet.
Replacement Considerations
Direct replacements must match the 8A/80V/75W ratings and TO-213AA package. Verify pinout compatibility and thermal resistance values. Cross-reference with other manufacturers' equivalents ensuring identical voltage and current limits.
