2N6308T1

Description：TRANS NPN 350V 8A TO204AA
Series：-

SKU:611b8146fa53 Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 350V 8A TO204AA
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：8:00 AM
Voltage - Collector Emitter Breakdown (Max)：350 V
Vce Saturation (Max) @ Ib, Ic：5V @ 2.67A, 8A
Current - Collector Cutoff (Max)：50µA
DC Current Gain (hFE) (Min) @ Ic, Vce：12 @ 3A, 5V
Power - Max：125 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 200°C
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Supplier Device Package：TO-204AA (TO-3)

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2N6308T1

Overview

The 2N6308T1 is an NPN silicon power transistor manufactured by Microchip Technology. It is designed for high-voltage amplifier and switching applications. The device features a collector-emitter voltage of 350 Vdc and a maximum collector current of 8 A. It utilizes a TO-3 metal flange mount package with two pins. The component is qualified per MIL-PRF-19500/498 standards, offering levels of product assurance including JAN, JANTX, and JANTXV.

Feature Summary

High breakdown voltage capability for demanding power environments
Robust TO-3 metal flange mount package for effective thermal management
Qualified under MIL-PRF-19500/498 for military-grade reliability

Applications

High voltage inverters
Switching regulators
General purpose high voltage amplifier circuits

Procurement Notes

Verify the specific ordering suffix to confirm the required level of product assurance (JAN, JANTX, or JANTXV) as defined in the datasheet. Ensure the procurement channel provides traceability documentation consistent with military qualification standards. Confirm that the TO-3 package dimensions match the mechanical constraints of the target assembly before finalizing orders.

Selection Notes

Select this component when high voltage isolation and significant power dissipation are required. The 350 V rating distinguishes it from lower voltage counterparts like the 2N6306. Consider the TO-3 package size and mounting requirements for heat sinking. Evaluate the need for military-grade qualification versus commercial alternatives based on the operational environment and reliability targets.

Part Context

This part belongs to the 2N6306/2N6308 family of NPN power transistors. While sharing similar structural characteristics, the 2N6308 variant offers higher voltage tolerance compared to the 2N6306. Both devices serve as foundational components in high-power discrete semiconductor applications requiring robust performance and durability.