2N6315

2N6315

$37.95
  • Description:TRANS NPN 60V 7A TO66
  • Series:-

SKU:9b2c142fe89b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 60V 7A TO66
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):7:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 1.75A, 7A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 500mA, 4V
  • Power - Max:90 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66 (TO-213AA)

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2N6315

Overview

The Microchip Technology 2N6315 is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting in the TO-66 (TO-213AA) package. It features a maximum collector-emitter breakdown voltage of 60 V and a continuous collector current rating of 7 A. The device supports a maximum power dissipation of 90 W and operates within a junction temperature range of -65°C to 200°C. Key electrical characteristics include a DC current gain (hFE) minimum of 35 at 500 mA and 4 V, with a maximum collector cutoff current of 500 µA.

Feature Summary

  • High power handling capability with 90 W dissipation rating
  • Wide operating temperature range suitable for extreme environments
  • Robust construction in hermetic metal TO-66 package

Applications

  • High-power switching circuits
  • Industrial control systems
  • Military and aerospace electronics

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheets. Confirm RoHS status as this specific part may not comply with current environmental directives. Ensure proper handling procedures are followed due to the leaded construction and high-power thermal requirements during installation.

Selection Notes

Select this component when high current capacity and robust packaging are required. The TO-66 case provides superior thermal performance compared to plastic packages. Verify that the 60 V breakdown voltage meets circuit requirements. Consider the manual reset or specific application constraints if used in supervisory roles, though primarily a power transistor.

Part Context

This NPN transistor belongs to Microchip's discrete semiconductor portfolio, specifically the bipolar transistor category. It serves as a rugged alternative to standard plastic-packaged transistors in applications demanding higher reliability and thermal stability. The TO-66 package is historically significant in military and high-reliability industrial sectors.

FAQ

What is the maximum junction temperature for the 2N6315?

The maximum junction temperature is 200°C.

Is the 2N6315 available in a surface-mount package?

No, it is designed for through-hole mounting in the TO-66 package.

What is the typical DC current gain specification?

The minimum DC current gain (hFE) is 35 when tested at 500 mA collector current and 4 V collector-emitter voltage.

2N63152N6315
$37.95
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