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The Microchip Technology 2N6315 is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting in the TO-66 (TO-213AA) package. It features a maximum collector-emitter breakdown voltage of 60 V and a continuous collector current rating of 7 A. The device supports a maximum power dissipation of 90 W and operates within a junction temperature range of -65°C to 200°C. Key electrical characteristics include a DC current gain (hFE) minimum of 35 at 500 mA and 4 V, with a maximum collector cutoff current of 500 µA.
Verify component authenticity by checking manufacturer markings against official datasheets. Confirm RoHS status as this specific part may not comply with current environmental directives. Ensure proper handling procedures are followed due to the leaded construction and high-power thermal requirements during installation.
Select this component when high current capacity and robust packaging are required. The TO-66 case provides superior thermal performance compared to plastic packages. Verify that the 60 V breakdown voltage meets circuit requirements. Consider the manual reset or specific application constraints if used in supervisory roles, though primarily a power transistor.
This NPN transistor belongs to Microchip's discrete semiconductor portfolio, specifically the bipolar transistor category. It serves as a rugged alternative to standard plastic-packaged transistors in applications demanding higher reliability and thermal stability. The TO-66 package is historically significant in military and high-reliability industrial sectors.
The maximum junction temperature is 200°C.
No, it is designed for through-hole mounting in the TO-66 package.
The minimum DC current gain (hFE) is 35 when tested at 500 mA collector current and 4 V collector-emitter voltage.