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The Central Semiconductor Corp 2N6318 is a PNP silicon power transistor housed in a hermetically sealed TO-66 metal case. It features a collector-emitter voltage of 80 V and a continuous collector current rating of 7 A, with a peak collector current capability of 15 A. The device dissipates up to 90 W at 25°C case temperature, supported by a thermal resistance of 1.95 °C/W. Operating junction temperatures range from -65°C to +200°C. Electrical characteristics include a minimum DC current gain (hFE) of 4.0 at 7.0 A, saturation voltages of 2.0 V (VCE) and 2.5 V (VBE) under heavy load, and a transition frequency of 4.0 MHz.
Verify the specific plating configuration required for your assembly process before ordering. Central Semiconductor offers both Tin/Lead and Lead-Free (PBFREE) options. To specify the desired finish, append the corresponding suffix directly to the part number during procurement. Confirm availability status as this component may be subject to End-of-Life management protocols.
Select the 2N6318 when a rugged, high-current PNP transistor is needed for demanding environments. Its TO-66 flange mount facilitates efficient heat dissipation for high-power loads. Ensure the design accounts for the complementary nature of the device if utilizing matched pairs with the NPN variants. Verify that the operating voltage does not exceed the 80 V collector-emitter limit.
This component belongs to the Central Semiconductor 2N6315 series of complementary silicon power transistors. The series includes NPN types (2N6315, 2N6316) and PNP types (2N6317, 2N6318). These devices are specifically engineered for robust performance in power handling scenarios requiring hermetic sealing and high thermal stability within a standardized TO-66 footprint.
Central Semiconductor has classified the 2N6318 as End-of-Life (EOL). No direct replacement part numbers are currently listed in official documentation. Contact manufacturer support for potential alternate source assistance.