2N6318

2N6318

  • Description:TRANSISTOR
  • Series:-

SKU:e4feeb99ebe3 Category: Brand:

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Product Detailed Parameters

  • Description:TRANSISTOR
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):7:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 1.75A, 7A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 500mA, 4V
  • Power - Max:90 W
  • Frequency - Transition:4MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66
  • Grade:-
  • Qualification:-

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2N6318

Overview

The Central Semiconductor Corp 2N6318 is a PNP silicon power transistor housed in a hermetically sealed TO-66 metal case. It features a collector-emitter voltage of 80 V and a continuous collector current rating of 7 A, with a peak collector current capability of 15 A. The device dissipates up to 90 W at 25°C case temperature, supported by a thermal resistance of 1.95 °C/W. Operating junction temperatures range from -65°C to +200°C. Electrical characteristics include a minimum DC current gain (hFE) of 4.0 at 7.0 A, saturation voltages of 2.0 V (VCE) and 2.5 V (VBE) under heavy load, and a transition frequency of 4.0 MHz.

Feature Summary

  • Hermetically sealed metal package for environmental protection
  • Complementary pairing with NPN 2N6315 and 2N6316 devices
  • Designed for general-purpose amplifier and switching applications

Applications

  • Untuned amplifier circuits
  • General purpose power switching
  • Commercial, industrial, and military uses

Procurement Notes

Verify the specific plating configuration required for your assembly process before ordering. Central Semiconductor offers both Tin/Lead and Lead-Free (PBFREE) options. To specify the desired finish, append the corresponding suffix directly to the part number during procurement. Confirm availability status as this component may be subject to End-of-Life management protocols.

Selection Notes

Select the 2N6318 when a rugged, high-current PNP transistor is needed for demanding environments. Its TO-66 flange mount facilitates efficient heat dissipation for high-power loads. Ensure the design accounts for the complementary nature of the device if utilizing matched pairs with the NPN variants. Verify that the operating voltage does not exceed the 80 V collector-emitter limit.

Part Context

This component belongs to the Central Semiconductor 2N6315 series of complementary silicon power transistors. The series includes NPN types (2N6315, 2N6316) and PNP types (2N6317, 2N6318). These devices are specifically engineered for robust performance in power handling scenarios requiring hermetic sealing and high thermal stability within a standardized TO-66 footprint.

Replacement Considerations

Central Semiconductor has classified the 2N6318 as End-of-Life (EOL). No direct replacement part numbers are currently listed in official documentation. Contact manufacturer support for potential alternate source assistance.

2N63182N6318

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