2N6329

2N6329

$103.67
  • Description:NPN TRANSISTOR
  • Series:*

SKU:f082486a8359 Category: Brand:

  
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Product Detailed Parameters

  • Description:NPN TRANSISTOR
  • Series:*
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-

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2N6329

Overview

The 2N6329 is a PNP silicon power transistor manufactured by Microchip Technology. It features a collector-base voltage of -60V and a continuous collector current rating of 30A. The device has a maximum power dissipation of 114W at 25°C ambient temperature. Its transition frequency is specified at 3MHz, with a DC current gain (hFE) ranging from 6 to 30. The component utilizes a TO-3 package for thermal management.

Feature Summary

  • High current handling capability suitable for power applications
  • Robust thermal design via TO-3 metal case
  • Defined current gain range for amplifier stability

Applications

  • Power amplifier circuits
  • Switching applications
  • Industrial automation modules

Procurement Notes

Verify the manufacturer source carefully as multiple unclassified manufacturers list this part number. Confirm the specific datasheet version matches your electrical requirements. Ensure the TO-3 package dimensions align with your heat sink interface. Check for any ordering suffixes that may indicate specific binning or testing criteria.

Selection Notes

Select this component when high current switching or amplification is required within a 60V limit. Consider the TO-3 package size constraints for your enclosure. Evaluate the hFE range of 6-30 against your circuit biasing needs. Ensure adequate thermal resistance paths are designed for 114W dissipation.

Part Context

This part belongs to the single bipolar transistor category. It serves as a discrete power semiconductor solution. The 2N6329 designation follows standard JEDEC numbering conventions for NPN/PNP types. It competes in the general-purpose power transistor market segment.

Replacement Considerations

Cross-reference with other PNP transistors rated for 30A and 60V in TO-3 packages. Verify pinout compatibility before substitution. Check if alternative manufacturers offer equivalent hFE bins.

2N63292N6329
$103.67
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