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The 2N6329 is a PNP silicon power transistor manufactured by Microchip Technology. It features a collector-base voltage of -60V and a continuous collector current rating of 30A. The device has a maximum power dissipation of 114W at 25°C ambient temperature. Its transition frequency is specified at 3MHz, with a DC current gain (hFE) ranging from 6 to 30. The component utilizes a TO-3 package for thermal management.
Verify the manufacturer source carefully as multiple unclassified manufacturers list this part number. Confirm the specific datasheet version matches your electrical requirements. Ensure the TO-3 package dimensions align with your heat sink interface. Check for any ordering suffixes that may indicate specific binning or testing criteria.
Select this component when high current switching or amplification is required within a 60V limit. Consider the TO-3 package size constraints for your enclosure. Evaluate the hFE range of 6-30 against your circuit biasing needs. Ensure adequate thermal resistance paths are designed for 114W dissipation.
This part belongs to the single bipolar transistor category. It serves as a discrete power semiconductor solution. The 2N6329 designation follows standard JEDEC numbering conventions for NPN/PNP types. It competes in the general-purpose power transistor market segment.
Cross-reference with other PNP transistors rated for 30A and 60V in TO-3 packages. Verify pinout compatibility before substitution. Check if alternative manufacturers offer equivalent hFE bins.