2N6338

2N6338

  • Description:TRANS NPN 100V 25A TO204
  • Series:-

SKU:b5fa49d5525c Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 100V 25A TO204
  • Series:-
  • Mfr:onsemi
  • Package:Tray
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):25 A
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:1.8V @ 2.5A, 25A
  • Current - Collector Cutoff (Max):50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10A, 2V
  • Power - Max:200 W
  • Frequency - Transition:40MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-204 (TO-3)
  • Grade:-
  • Qualification:-

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2N6338

Overview

The onsemi 2N6338 is a high-power NPN silicon transistor designed for industrial and military power amplifier and switching circuit applications. It features a TO-204AA (TO-3) package with a maximum continuous collector current of 25 Adc and peak current of 50 A. The device guarantees a minimum collector-emitter sustaining voltage (VCEO(sus)) of 100 Vdc at IC = 50 mAdc, IB = 0. DC current gain ranges from 30 to 120 at IC = 10 Adc, dropping to a minimum of 12 at IC = 25 Adc. Collector-emitter saturation voltage is limited to 1.0 Vdc max at IC = 10 Adc, IB = 1.0 Adc. Switching times at IC = 10 Adc include a rise time of 0.3 μs max, storage time of 1.0 μs max, and fall time of 0.25 μs max. Total device dissipation is 200 W at TC = 25°C.

Feature Summary

  • High collector-emitter sustaining voltage capability
  • Fast switching times optimized for high-current operation
  • Low collector-emitter saturation voltage
  • High DC current gain across wide operating range

Applications

  • Industrial power amplifier circuits
  • Military power amplifier circuits
  • High-power switching circuit applications

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard part number corresponds to the non-Pb-free version, while the 'G' suffix indicates a Pb-free package. Confirm the exact package style required, as pin configurations vary between Style 1 (Base-Emitter-Collector Case) and Style 2 (Base-Collector Case Emitter). Ensure thermal management aligns with the specified junction-to-case thermal resistance.

Selection Notes

Select this component for applications requiring robust high-current handling up to 25 Adc continuous. The TO-204AA package supports significant power dissipation but requires appropriate heatsinking. Consider the trade-off between saturation voltage and switching speed if operating near the 25 A limit. Verify that the base drive current can meet the requirements for maintaining low saturation voltage at peak loads.

Part Context

This device belongs to the 2N6338/2N6341 family of high-power NPN silicon transistors manufactured by onsemi. It is specifically engineered for demanding environments where reliability under high stress conditions is critical. The TO-204AA mechanical outline provides a standardized mounting interface compatible with traditional power transistor heatsinks and chassis mounts used in legacy and modern industrial equipment.

Replacement Considerations

Direct substitutes within the same series include the 2N6341, which offers a higher VCEO(sus) rating of 150 Vdc min compared to the 2N6338's 100 Vdc min. Both share identical current ratings and package dimensions. When replacing, ensure the application voltage does not exceed the lower-rated device's specifications.

2N63382N6338

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