2N6338G

$5.09

Description：TRANS NPN 100V 25A TO204
Series：-

SKU:3ffd35efe846 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 100V 25A TO204
Series：-
Mfr：onsemi
Package：Tray,Tray
Transistor Type：NPN
Current - Collector (Ic) (Max)：25 A
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max)：50µA
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10A, 2V
Power - Max：200 W
Frequency - Transition：40MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Supplier Device Package：TO-204 (TO-3)
Grade：-
Qualification：-

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2N6338G

Overview

The onsemi 2N6338G is a high-power NPN silicon transistor designed for industrial and military power amplifier and switching circuit applications. It features a minimum collector-emitter sustaining voltage of 100 Vdc, a continuous collector current rating of 25 Adc, and a peak collector current of 50 A. The device offers a DC current gain ranging from 30 to 120 at 10 Adc and a maximum collector-emitter saturation voltage of 1.0 Vdc at the same current. It operates within a junction temperature range of -65°C to +200°C and utilizes a TO-204AA (TO-3) package.

Feature Summary

High collector-emitter sustaining voltage capability
High DC current gain performance
Low collector-emitter saturation voltage
Fast switching times

Applications

Industrial power amplifier circuits
Military power amplifier circuits
High-power switching applications

Procurement Notes

Verify the specific ordering suffix 'G' confirms Pb-Free status as documented in the official datasheet. Confirm the package type matches the required mechanical footprint for your assembly process. Ensure thermal management solutions align with the specified thermal resistance and power derating curves provided by the manufacturer. Validate that the application environment stays within the stated operating temperature limits.

Selection Notes

Select this component when high voltage handling and significant current capacity are required in a single discrete package. Consider the thermal resistance characteristics and safe operating area curves for reliable operation under varying load conditions. Evaluate the switching speed requirements against the specified rise, storage, and fall times to ensure compatibility with the target circuit frequency.

Part Context

This part belongs to the 2N6338/2N6341 series of high-power NPN silicon transistors manufactured by onsemi. The series is engineered specifically for demanding power applications where robustness and high current handling are critical. The 2N6338 variant provides a 100 Vdc rating, distinguishing it from the higher voltage 2N6341 counterpart.