2N6341

$55.91

Description：TRANS NPN 150V 25A TO-3
Series：-

SKU:2b1d27618b40 Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 150V 25A TO-3
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：25 A
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max)：50µA
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10A, 2V
Power - Max：200 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Supplier Device Package：TO-3

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2N6341

Overview

The 2N6341 is a single NPN bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for high-power applications with a maximum collector current of 25 A and a collector-emitter breakdown voltage of 150 V. The device features a DC current gain of at least 30 when tested at 10 A and 2 V. It operates within a temperature range of -65°C to 175°C junction temperature and has a maximum power dissipation rating of 200 W.

Feature Summary

High power handling capability with 200 W maximum dissipation
Robust current handling rated up to 25 A collector current
Wide operating temperature range suitable for harsh environments
Through-hole TO-3 package construction

Applications

High-power linear regulation circuits
Industrial motor control systems
Power amplification stages

Procurement Notes

Verify the specific manufacturer lot and assembly site details against the latest Product Change Notification (PCN) documents before procurement. Confirm that the TO-3 package labeling meets your facility's identification requirements, as label changes have been announced. Ensure compatibility with existing thermal management solutions given the 200 W power rating.

Selection Notes

Select this component when a high-voltage, high-current NPN transistor in a TO-3 package is required. Consider the 150 V breakdown voltage and 25 A continuous current limits for circuit design. Evaluate the thermal resistance characteristics inherent to the TO-3 case style for adequate heat sinking. Verify that the minimum hFE of 30 at 10 A meets the drive requirements of the application.

Part Context

This part belongs to the Microchip Technology discrete semiconductor portfolio, specifically within the Bipolar Junction Transistors category. It serves as a legacy high-power switching and amplification device. The TO-3 metal can package provides robust mechanical stability and efficient heat transfer for industrial-grade electronics.