2N6341

2N6341

  • Description:TRANS NPN 150V 25A TO204
  • Series:-

SKU:2b1d27618b40 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 150V 25A TO204
  • Series:-
  • Mfr:onsemi
  • Package:Tray
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):25 A
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:1.8V @ 2.5A, 25A
  • Current - Collector Cutoff (Max):50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10A, 2V
  • Power - Max:200 W
  • Frequency - Transition:40MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-204 (TO-3)
  • Grade:-
  • Qualification:-

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2N6341

Overview

The onsemi 2N6341 is a high-power NPN silicon transistor designed for industrial and military power amplifier and switching circuit applications. It features a collector-emitter sustaining voltage of 150 Vdc (min) and a continuous collector current of 25 Adc. The device offers a DC current gain ranging from 30 to 120 at 10 Adc, with a maximum collector-emitter saturation voltage of 1.8 Vdc at 25 Adc. Total device dissipation reaches 200 W at 25°C case temperature, supported by a thermal resistance of 0.875°C/W. Operating junction temperatures span from -65°C to +200°C.

Feature Summary

  • High collector-emitter sustaining voltage capability
  • Low collector-emitter saturation voltage
  • Fast switching times
  • High DC current gain

Applications

  • Industrial power amplifier circuits
  • Military power amplifier circuits
  • Power switching circuit applications

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard part number denotes the base component, while suffixes such as 'G' indicate lead-free packaging options. Confirm that the procurement channel provides official documentation matching the MIL-PRF-19500/509D specification requirements. Ensure the received components align with the requested package style and electrical grade before integration into critical systems.

Selection Notes

Select the 2N6341 over the 2N6338 variant when the application requires a higher collector-emitter sustaining voltage of 150 Vdc compared to the 100 Vdc offered by the 2N6338. Both devices share identical current handling capabilities and package dimensions. Evaluate the safe operating area curves to ensure operation remains within thermal and second breakdown limits under varying duty cycles and case temperatures.

Part Context

This component belongs to the 2N6338/2N6341 family of high-power NPN silicon transistors manufactured by onsemi. The series is engineered for robust performance in demanding environments, featuring a TO-204AA (TO-3) metal case outline. The devices are JEDEC registered and comply with stringent military specifications, ensuring reliability for long-term deployment in specialized electronic equipment.

Replacement Considerations

Direct substitute part numbers include 2N6341G for lead-free versions. Verify compatibility with existing mounting hardware due to the TO-204AA package style. Cross-reference datasheet parameters to confirm voltage and current ratings match the original design requirements.

2N63412N6341

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