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Product Detailed Parameters
- Description：TRANS PNP 80V 50A TO-63
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：50 A
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：250 W
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：Stud Mount
- Package / Case：TO-211MB, TO-63-4, Stud
- Supplier Device Package：TO-63
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Overview
The 2N6380 is a silicon NPN power bipolar junction transistor manufactured by Microchip Technology. It is designed for high-power applications and utilizes a TO-220 package for through-hole mounting. The device features a maximum collector-emitter voltage of 80V and supports a continuous collector current of 4A. With a minimum DC current gain (hFE) of 2500, it functions as a Darlington transistor. The component has a maximum power dissipation of 65W and operates within a temperature range of -65°C to 150°C.
Feature Summary
- High current gain capability suitable for amplification stages
- Robust thermal performance with 65W power dissipation rating
- Designed for through-hole installation in industrial environments
Applications
- Power switching circuits
- Linear amplifier stages
- Industrial control systems
Procurement Notes
Verify the specific manufacturer source, as the 2N6380 designation may be associated with onsemi for identical electrical specifications. Confirm package type and pinout compatibility before integration. Ensure RoHS compliance documentation matches project requirements. Check for availability constraints or long lead times from authorized distributors. Validate that the supplied unit matches the intended NPN Darlington configuration.
Selection Notes
Select this component when high current drive and significant voltage handling are required in a single package. The high hFE reduces base drive requirements compared to standard BJTs. Consider thermal management solutions due to the 65W dissipation limit. Verify that the 80V breakdown voltage meets circuit peak voltage demands. Evaluate package size constraints for the TO-220 form factor.
Part Context
This part belongs to the family of power bipolar transistors used in discrete semiconductor applications. It serves as a fundamental building block for power electronics where signal amplification or switching is necessary. The specification aligns with standard industry definitions for high-gain NPN devices.
Replacement Considerations
- 2N6381
- 2N6388G
FAQ
Is the 2N6380 a standard BJT or a Darlington pair?
It is specified as a Darlington transistor with a minimum DC current gain of 2500.
What is the maximum operating temperature for this device?
The maximum operating temperature is 150°C.
Does the 2N6380 support reverse voltage operation?
The maximum emitter-base voltage is limited to 5V, indicating restricted reverse polarity tolerance.
