2N6381

2N6381

$695.27
  • Description:TRANS PNP 100V 50A TO-63
  • Series:-

SKU:1471070908ad Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 100V 50A TO-63
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):50 A
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:250 W
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:Stud Mount
  • Package / Case:TO-211MB, TO-63-4, Stud
  • Supplier Device Package:TO-63

Download product information

2N6381

Overview

The Microchip Technology 2N6381 is a silicon NPN power bipolar junction transistor (BJT) designed for high-power applications. It utilizes a through-hole mounting style within the TO-213AA package, which corresponds to the TO-220AB form factor. The device supports a maximum collector current of 8 A and withstands a collector-emitter voltage of 80 V. With a power dissipation rating of 75 W, it operates across an extended temperature range from -55°C to +200°C. The component features a minimum DC current gain (hFE) of 100 and a maximum saturation voltage of 3 V at specified conditions.

Feature Summary

  • High thermal stability with a maximum junction temperature rating of 200°C
  • Robust power handling capability suitable for high-current switching applications
  • Through-hole construction ensuring secure mechanical attachment on printed circuit boards

Applications

  • Power supply regulation circuits
  • Motor control systems
  • Industrial switching applications

Procurement Notes

Verify RoHS compliance status prior to procurement as documentation indicates potential non-compliance for specific manufacturing lots. Confirm the exact package variant matches the required TO-213AA specification. Ensure thermal management solutions are adequate for the 75 W dissipation rating. Validate that the supplier provides official Microchip Technology traceability documents. Check for any recent Product Change Notifications affecting pinout or material composition.

Selection Notes

Select this component when high current capacity and elevated temperature operation are required. The 80 V breakdown voltage suits medium-voltage power stages. Consider the TO-213AA package for efficient heat sinking compared to smaller surface-mount alternatives. Evaluate the hFE range to ensure compatibility with base drive circuitry requirements in the target design.

Part Context

The 2N6381 belongs to the legacy military-grade transistor series now manufactured by Microchip Technology. It serves as a direct replacement for older JAN/MSA specifications. The part is distinct from the MCP6281 operational amplifier and other unrelated 6381-series connectors found in general databases. It represents a standard discrete power BJT solution for rugged environments.

Replacement Considerations

Consult official Microchip cross-reference guides for verified equivalents. Generic substitutes may not match the 200°C temperature rating or specific hFE characteristics. Verify pinout compatibility before swapping with similar TO-220 devices.

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