2N6384 PBFREE

Overview

The Central Semiconductor Corp 2N6384 PBFREE is an NPN Silicon Power Darlington Transistor housed in a TO-3 case. It features a collector-emitter voltage (VCEO) of 60 V and supports a continuous collector current (IC) of 10 A with a peak collector current (ICM) of 15 A. The device provides a power dissipation rating of 100 W at 25°C case temperature, with a thermal resistance (ΘJC) of 1.75 °C/W. Operating and storage junction temperatures range from -65°C to +200°C.

Feature Summary

• High current handling capability with 10 A continuous collector current
• Robust thermal management supporting up to 100 W power dissipation
• Wide operating temperature range extending to +200°C

Applications

• Power amplifier applications

Procurement Notes

Verify the component status before procurement as the 2N6384 series has been classified as End of Life by Central Semiconductor Corp. Orders are restricted to available inventory on hand. Confirm lead times and final shipment dates directly with the manufacturer or authorized distributors, as standard production may be discontinued.

Selection Notes

Select this component for high-power linear applications requiring significant current gain. Ensure the design accommodates the TO-3 package dimensions and mounting requirements. Verify that the 60 V collector-emitter voltage aligns with the circuit's maximum supply rails and transient conditions.

Part Context

This part belongs to the 2N6383/2N6384/2N6385 series of NPN Silicon Power Darlington Transistors manufactured by Central Semiconductor Corp. The series shares identical mechanical outlines and electrical characteristics except for the collector-emitter voltage ratings, which vary across the three part numbers.

Replacement Considerations

Central Semiconductor Corp lists no suggested replacement part numbers for the 2N6384 PBFREE in their discontinuation notice. Contact the manufacturer's sales team for assistance in locating alternate sources.