2N6387G

$1.62

Description：TRANS NPN DARL 60V 10A TO-220
Series：-

SKU:b0ce545373fe Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN DARL 60V 10A TO-220
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：10:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：3V @ 100mA, 10A
Current - Collector Cutoff (Max)：1mA
DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 5A, 3V
Power - Max：2 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220
Grade：-
Qualification：-

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2N6387G

Overview

The onsemi 2N6387G is a high-power NPN silicon Darlington transistor housed in a TO-220AB through-hole package. It features a maximum continuous collector current of 10 A and a collector-emitter breakdown voltage (Vceo) of 60 V. The device provides a minimum DC current gain (hFE) of 100 and supports a total power dissipation of up to 65 W at 25°C ambient temperature. Operating temperatures range from -65°C to 150°C, with a maximum collector-base saturation voltage of 2 V.

Feature Summary

High current handling capability suitable for heavy-duty switching applications
Integrated internal circuitry includes built-in diode and resistor for simplified drive requirements
Robust thermal performance designed for flange mount installation

Applications

Motor control circuits requiring high current switching
Power amplifier output stages
Industrial relay driver applications

Procurement Notes

Verify the specific manufacturer source, as the component was originally produced by Harris Semiconductor. Confirm that the part number corresponds to the correct legacy specifications and pinout configuration before integration into new designs. Ensure compatibility with existing thermal management infrastructure.

Selection Notes

Select this component when high current switching is required alongside simplified base drive characteristics provided by the integrated resistor and diode. Consider the TO-220AB package constraints and ensure adequate heat sinking is available to manage the 65 W power dissipation rating under operational loads.

Part Context

This component belongs to the legacy power bipolar transistor category, originally manufactured by Harris Semiconductor before industry consolidation. It serves as a robust discrete solution for medium-voltage, high-current switching tasks where standard Darlington configurations are insufficient without additional external components.

Replacement Considerations

Direct substitutes include the 2N6388G, which offers similar electrical characteristics but with higher current gain. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers or updated series replacements.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.