2N6424

Overview

The Microchip Technology 2N6424 is a silicon PNP power transistor designed for high-speed switching and high-voltage amplifier applications. It features a maximum collector current of 1 A, a collector-emitter breakdown voltage of 225 V, and a maximum power dissipation of 20 W. The device is housed in a TO-66 package.

Feature Summary

• Designed for high-speed switching operations
• Suitable for high-voltage amplifier applications

Applications

• High-speed switching circuits
• High-voltage amplifier stages

Procurement Notes

Verify the manufacturer source carefully, as multiple vendors including Central Semiconductor and New Jersey Semiconductor produce this part number. Confirm the specific datasheet parameters match your design requirements, particularly regarding thermal resistance and pinout configuration for the TO-66 package.

Selection Notes

Select this component when a PNP transistor with 225V breakdown and 1A continuous current capability is required. Ensure the application environment supports the TO-66 metal can package and that the thermal management system can handle up to 20W of power dissipation effectively.

Part Context

This component belongs to the family of silicon PNP power transistors, often paired with NPN counterparts like the 2N3738. It serves as a robust discrete solution for power electronics requiring high voltage tolerance and moderate current handling in industrial or military-grade environments.

Replacement Considerations

Public confirmed substitutes include the 2N6425 from Central Semiconductor. Other equivalents may be found among generic PNP power transistors meeting identical 225V, 1A, and 20W specifications.