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Product Detailed Parameters
- Description：TRANS PNP 300V 1A TO66
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：300 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：20 W
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66 (TO-213AA)
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Overview
The Microchip Technology 2N6425 is a silicon PNP power transistor housed in a hermetically sealed TO-66 metal package. It features a collector-emitter voltage of -300 V and a continuous collector current rating of 1 A. The device supports a maximum transition frequency of 10 MHz and includes a collector capacitance specification. Designed for high-speed switching applications, it operates within a temperature range of -65°C to +175°C.
Feature Summary
- Hermetically sealed TO-66 metal package construction
- High-speed switching capability with 10 MHz transition frequency
- Robust 300 V collector-emitter voltage rating
Applications
- High-voltage power switching circuits
- Industrial control systems requiring hermetic sealing
- Military and aerospace electronic assemblies
Procurement Notes
Verify the manufacturer marking on the component header to confirm Microchip Technology origin. Ensure the TO-66 package dimensions match the design footprint. Check datasheet specifications for absolute maximum ratings before integration. Confirm hermetic seal integrity if operating in harsh environments. Validate pinout configuration against the official schematic.
Selection Notes
Select this component when high-voltage PNP switching is required in hermetically sealed environments. The TO-66 package provides superior thermal dissipation compared to plastic alternatives. Consider the 1 A current limit and 300 V breakdown voltage for circuit design. Evaluate the transition frequency for high-speed application suitability.
Part Context
The 2N6425 belongs to the family of silicon PNP power transistors designed for demanding applications. It shares the TO-66 hermetic package form factor with other military-grade bipolar devices. This series emphasizes reliability and radiation hardness suitable for long-life electronic systems.
Replacement Considerations
Cross-reference with Central Semiconductor 2N6425 or Semelab equivalents for identical electrical characteristics. Verify package compatibility and pinout alignment before substitution.
