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The Central Semiconductor Corp 2N6426 APP PBFREE is a silicon NPN Darlington transistor housed in a TO-92-3 through-hole package. It features a collector-emitter voltage (VCEO) of 80 V and a collector-base voltage (VCBO) of 100 V. The device supports a continuous collector current of 800 mA with a power dissipation rating of 1 W. Operating characteristics include a minimum DC current gain (hFE) of 1000 at 5 V and 100 mA, and a transition frequency (fT) of 10 MHz. The component functions within a temperature range from -65 °C to +150 °C.
Verify the specific suffix configuration against official datasheets to ensure compatibility with required environmental standards and pinout definitions. Confirm that the procurement channel provides authentic components matching the manufacturer's specifications. Cross-reference ordering information directly with Central Semiconductor documentation to avoid discrepancies in part identification or packaging variations.
Select this component when high current drive capability is required alongside significant signal amplification in a compact form factor. The 800 mA rating and 1 W dissipation support moderate power handling. Ensure the circuit design accommodates the specified voltage limits and thermal requirements for sustained operation within the defined temperature range.
This device belongs to the MPSA series of Darlington transistors manufactured by Central Semiconductor. The series offers various voltage and current configurations optimized for general-purpose switching and amplification tasks. The 2N6426 variant specifically addresses applications requiring higher current capacity compared to lower-rated counterparts in the same family.
Direct replacements include MPSA64 and MPSA13. Verify electrical parameters such as voltage ratings and current gains match the original design requirements before substitution.