2N6426G

Overview

The onsemi 2N6426G is a silicon NPN Darlington bipolar junction transistor designed for through-hole mounting in TO-92 packages. It provides high current gain and handles collector currents up to 500 mA with a collector-emitter breakdown voltage of 40 V. The device features low leakage current and operates within a junction temperature range of -55°C to 150°C, dissipating up to 625 mW.

Feature Summary

• Darlington configuration delivers extremely high DC current gain for sensitive signal amplification
• Robust thermal performance supports operation at elevated junction temperatures up to 150°C
• Low collector cutoff current ensures minimal power loss in off-state conditions

Applications

• High-gain audio pre-amplifier stages
• Solid-state relay driver circuits
• Switching applications requiring moderate current control

Procurement Notes

Verify the specific suffix 'G' against official datasheets to confirm lead-free compliance status. Confirm package dimensions match TO-92 specifications. Check for obsolescence notices as this component family has faced lifecycle changes. Ensure sourcing channels provide valid traceability documentation.

Selection Notes

Select this component when high current gain is critical for driving loads from low-level signals. Compare saturation voltage requirements against load specifications. Verify that the TO-92 package size fits the mechanical constraints of the target design. Consider thermal management needs given the 625 mW power dissipation limit.

Part Context

This part belongs to the standard NPN Darlington transistor series manufactured by onsemi. It serves as a discrete semiconductor solution for general-purpose switching and amplification tasks. The component utilizes silicon technology and is intended for through-hole PCB assembly methods.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.