2N6427 TIN/LEAD

Overview

The Central Semiconductor Corp 2N6427 is a silicon NPN Darlington transistor housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of 80 V, a collector-base voltage (VCBO) of 100 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a continuous collector current of 500 mA with a maximum power dissipation of 625 mW. Operating temperatures range from -65°C to +150°C.

Feature Summary

• High current gain capability inherent to the Darlington configuration
• Suitable for high-voltage switching applications within specified limits
• Designed for through-hole mounting via standard leaded termination

Applications

• General-purpose switching circuits
• Driver stages for relays or lamps
• Low-power amplifier output stages

Procurement Notes

Verify the specific ordering suffix required for tin/lead plating directly with the manufacturer or authorized distributor. Confirm RoHS compliance status and availability as these may vary by production batch. Ensure the requested part number matches the exact electrical specifications and package type required for your design.

Selection Notes

Select this component when a single NPN Darlington transistor is needed for moderate current switching tasks. Consider the 80 V collector-emitter rating and 500 mA current capacity against circuit requirements. Evaluate thermal management needs given the 625 mW power dissipation limit in the TO-92 package.

Part Context

This component belongs to the family of silicon NPN Darlington transistors manufactured by Central Semiconductor. These devices are typically used where high current gain is required from a single package. The TO-92 package provides a compact solution for through-hole PCB assembly.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings before considering alternative manufacturers' equivalents.