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Product Detailed Parameters
- Description：TRANS NPN DARL 40V 0.5A TO92
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：1.5V @ 500µA, 500mA
- Current - Collector Cutoff (Max)：1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：20000 @ 100mA, 5V
- Power - Max：625 mW
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The onsemi 2N6427 is an NPN silicon Darlington transistor designed for applications requiring extremely high current gain at collector currents up to 1.0 A. It features a maximum collector-emitter voltage of 40 V and a continuous collector current rating of 1.2 A. The device offers a minimum DC current gain (hFE) ranging from 10,000 to 200,000 depending on the operating current. Total power dissipation is rated at 625 mW in a TO-92 package. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- High DC current gain suitable for sensitive signal amplification
- Darlington configuration providing substantial current drive capability
- Robust thermal performance with a maximum junction temperature of 150°C
Applications
- High-gain amplifier circuits
- Switching applications requiring low input drive current
- Driver stages for relays or loads
Procurement Notes
Verify the specific manufacturer source, as the component was originally produced by Fairchild Semiconductor and may now be distributed under onsemi branding. Confirm the package type matches the design requirements, typically TO-92 for through-hole mounting. Check datasheet revisions to ensure electrical characteristics align with current design specifications before finalizing procurement.
Selection Notes
Select this component when circuit designs demand very high current gain to minimize base drive requirements. Ensure the application operates within the 40 V collector-emitter voltage limit and does not exceed the 1.2 A continuous collector current rating. Consider the thermal resistance values if the device will operate near its maximum power dissipation limits in enclosed environments.
Part Context
This device belongs to the family of small-signal bipolar transistors utilizing a Darlington pair structure. It is functionally similar to the MPSA14 but optimized for higher current handling capabilities. The technology is sourced from Process 05, indicating specific manufacturing processes used to achieve the stated electrical performance metrics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the maximum DC current gain (hFE) specified for the 2N6427?
The minimum DC current gain ranges from 10,000 to 200,000, depending on the collector current test conditions.
Can the 2N6427 be used in life support devices?
No, Fairchild Semiconductor products are not authorized for use as critical components in life support devices without express written approval.
What is the maximum operating junction temperature?
The maximum operating and storage junction temperature range is -55°C to +150°C.
