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The onsemi 2N6427RLRA is an NPN silicon Darlington transistor housed in a TO-92 (TO-226AA) package. It supports a continuous collector current of 500 mA and withstands collector-emitter and collector-base voltages of 40 Vdc, with an emitter-base voltage rating of 12 Vdc. The device offers a DC current gain ranging from 10,000 to 200,000 depending on operating conditions. Total power dissipation reaches 625 mW at 25°C ambient temperature and 1.5 W at 25°C case temperature. Operating and storage junction temperatures span from -55°C to +150°C.
Verify the specific ordering suffix RLRA against the manufacturer's official documentation to confirm tape and reel packaging specifications. Confirm RoHS compliance status as indicated in the latest datasheet revisions. Ensure that the component marking matches the specified date code format. Validate that the TO-92 package dimensions align with the required PCB footprint constraints before finalizing procurement.
Select this component when high current gain is required within a low-voltage environment. The TO-92 package limits total power dissipation compared to larger packages, necessitating careful thermal management. Compare the DC current gain requirements against the minimum values provided in the electrical characteristics table. Consider the noise figure specifications if the application involves weak signal processing or high-fidelity audio reproduction.
This part belongs to the 2N6426/2N6427 series of NPN silicon Darlington transistors manufactured by onsemi. The 2N6427 variant specifically provides higher minimum DC current gain thresholds compared to the 2N6426. Both devices share identical maximum ratings and physical package dimensions, differing primarily in their guaranteed gain ranges. The series is designed for general-purpose amplification and switching tasks.
Publicly confirmed substitute part numbers are not available in the verified source material.