2N6428 PBFREE

Overview

The Central Semiconductor Corp 2N6428 PBFREE is a silicon NPN transistor manufactured via the epitaxial planar process, designed for high gain applications. It features a maximum collector-emitter voltage (VCEO) of 50 V and a collector-base voltage (VCBO) of 60 V. The device supports a maximum DC collector current of 200 mA with a power dissipation rating of 1.5 W in specific configurations, though some sources cite 625 mW. Key electrical parameters include a transition frequency (fT) ranging from 100 MHz to 700 MHz and a collector-emitter saturation voltage of 600 mV. It operates within a junction temperature range of -65°C to 150°C and utilizes a TO-92-3 (TO-226-3) through-hole package.

Feature Summary

• Epitaxial planar silicon NPN construction engineered for high gain performance
• Through-hole mounting capability in standard TO-92-3 package format
• Lead-free plating configuration designated by the PBFREE suffix

Applications

• General purpose amplification circuits requiring high gain
• Low noise signal processing applications
• Switching operations within specified voltage and current limits

Procurement Notes

Verify the specific power dissipation rating (1.5 W vs 625 mW) and transition frequency (100 MHz vs 700 MHz) against the manufacturer's official datasheet for the exact revision, as these values vary across documentation sources. Confirm the TO-92-3 package dimensions match your PCB footprint requirements. Ensure the PBFREE suffix is included in part numbers if lead-free compliance is mandatory for your assembly process. Cross-reference the collector-emitter saturation voltage specifications to ensure compatibility with your circuit's logic levels.

Selection Notes

Select this component when a high-gain NPN transistor is required for general-purpose or low-noise applications. The choice depends on verifying whether the higher power dissipation rating of 1.5 W or the lower 625 mW rating aligns with your thermal management strategy. Consider the transition frequency specifications; if high-speed switching is critical, confirm the 700 MHz fT variant is available. The TO-92-3 package is suitable for prototyping and low-volume production where through-hole mounting is preferred over surface-mount alternatives.

Part Context

The 2N6428 belongs to a family of silicon NPN transistors produced by Central Semiconductor Corp using epitaxial planar technology. It is often paired with its PNP counterpart, the 2N6429, for complementary push-pull configurations. The device is categorized under bipolar junction transistors (BJTs) intended for general-purpose use. The PBFREE designation indicates a specific manufacturing variant that adheres to environmental standards regarding lead content, distinguishing it from older tin/lead plated versions.

Replacement Considerations

Public confirmed substitute part numbers are not explicitly listed in the provided source material. Users should consult the manufacturer's official cross-reference documents for verified equivalents. Generic replacements must match the NPN configuration, 50 V VCEO rating, and TO-92-3 package form factor. Verify that any substitute meets the same high-gain and low-noise performance criteria documented for the 2N6428.