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The Central Semiconductor Corp 2N6486 TIN/LEAD is an NPN silicon power transistor housed in a TO-220 case. It features a collector-base voltage of 50 V, a collector-emitter voltage of 40 V, and an emitter-base voltage of 5.0 V. The device supports a continuous collector current of 15 A and a continuous base current of 5.0 A. Power dissipation reaches 75 W at a case temperature of 25°C, or 1.8 W at an ambient temperature of 25°C. Thermal resistance from junction to case is 1.67 °C/W. The operating and storage junction temperature range spans from -65°C to +150°C.
Verify the End of Life status indicated by Central Semiconductor Corp before procurement. Confirm availability through authorized distributors as production has ceased. Ensure the specific TIN/LEAD plating suffix matches design requirements. Review datasheet electrical characteristics against circuit constraints. Contact manufacturer support for inventory inquiries.
Select this component based on its 40 V collector-emitter breakdown and 15 A continuous current capability. Evaluate thermal management needs given the 75 W dissipation rating at case temperature. Verify compatibility with the TO-220 through-hole footprint. Consider the complementary PNP counterpart if push-pull configurations are required.
This part belongs to a series of complementary silicon power transistors manufactured by Central Semiconductor Corp. The series includes NPN types (2N6486-2N6488) and PNP types (2N6489-2N6491). These devices share similar structural designs intended for robust performance in power handling scenarios within standard industrial electronics frameworks.
Central Semiconductor lists no suggested replacement for the 2N6486.