2N6487

Overview

The Harris Corporation 2N6487 is a power NPN silicon bipolar junction transistor housed in a TO-220AB flange-mount package. It supports a maximum collector current of 15 A and a collector-emitter breakdown voltage of 60 V. The device features a single-element configuration with a plastic/epoxy body and through-hole terminals. It operates within a temperature range up to 150 °C and has a maximum power dissipation environment of 75 W.

Feature Summary

• High-current switching capability for power applications
• Robust thermal management via flange mount design
• Silicon construction for stable performance

Applications

• Power switching circuits
• Industrial control systems
• Motor drive interfaces

Procurement Notes

Verify the manufacturer origin carefully, as this component was originally produced by Harris Corporation, which has undergone corporate changes. Confirm that the specific unit matches the original Harris specifications rather than later rebrands or equivalents from other manufacturers like onsemi. Check for RoHS compliance status if required by your assembly process, as older Harris parts may not meet modern environmental standards.

Selection Notes

Select this component when a high-current NPN switch is required with a 60 V rating. Ensure the application can accommodate the TO-220AB through-hole form factor and provides adequate heatsinking for the 75 W dissipation rating. Compare against similar Harris series devices if different voltage or current ratings are needed.

Part Context

This part belongs to the Harris power transistor family, designed for robust industrial and commercial power electronics. It shares the TO-220AB packaging standard common among high-power discrete semiconductors. The device is distinct from Darlington configurations found in related model numbers.

Replacement Considerations

Direct substitutes include the 2N6487G from onsemi. Verify pinout compatibility and electrical parameter equivalence before substitution.