2N6491

Overview

The onsemi 2N6491 is a PNP silicon power transistor designed for general-purpose amplifier and switching applications. It features a collector-emitter voltage of 80 V, continuous collector current of 15 A, and total power dissipation of 75 W at 25°C case temperature. The device offers high DC current gain (minimum 20 at 5 A) and a current-gain-bandwidth product of 5 MHz. Packaged in a TO-220 format with Pb-free compliance, it operates within a junction temperature range of -65°C to +150°C.

Feature Summary

• High DC current gain capability
• High current gain-bandwidth product
• Compact TO-220 plastic package

Applications

• General-purpose amplifier circuits
• Power switching applications

Procurement Notes

Verify the specific part number suffix against official documentation to confirm package type and environmental compliance status. Ensure thermal management requirements align with the specified derating curves for reliable operation under load conditions.

Selection Notes

Select this component for designs requiring robust PNP power handling with moderate frequency response. Evaluate thermal resistance characteristics and safe operating area limits to ensure compatibility with the intended circuit's voltage and current demands.

Part Context

This device belongs to a complementary pair series alongside NPN counterparts like the 2N6487. Designed as a silicon plastic power transistor, it serves as a standard solution for medium-power amplification tasks where high current gain and reliable switching are required.

Replacement Considerations

Direct substitutes include the 2N6491G variant which maintains identical electrical specifications while ensuring lead-free packaging compliance.