2N6497G

2N6497G

  • Description:TRANS NPN 250V 5A TO-220
  • Series:-

SKU:b3fe192926fd Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 250V 5A TO-220
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):250 V
  • Vce Saturation (Max) @ Ib, Ic:5V @ 2A, 5A
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 2.5A, 10V
  • Power - Max:80 W
  • Frequency - Transition:5MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

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2N6497G

Overview

The 2N6497G is a plastic NPN silicon high-voltage power transistor manufactured by onsemi. It is designed for general-purpose switching and amplification applications requiring high voltage capability. The device features a robust construction suitable for demanding environments, offering reliable performance in circuits where standard transistors may fail due to voltage stress. It utilizes a standardized package configuration compatible with common mounting techniques.

Feature Summary

  • High-voltage NPN silicon construction
  • General-purpose switching and amplification capability
  • Robust plastic encapsulation for durability

Applications

  • High-voltage switching circuits
  • Industrial control systems
  • Power supply output stages

Procurement Notes

Verify the specific datasheet revision and mechanical dimensions against your PCB footprint requirements before procurement. Confirm that the lead-free status matches your assembly process specifications. Ensure the ordering suffix corresponds to the required tape-and-reel or tube packaging format as defined by the manufacturer's current production standards.

Selection Notes

Select this component when a high-voltage NPN transistor is required for discrete switching or linear regulation tasks. Evaluate the collector-emitter voltage rating against the maximum circuit transient voltages. Consider the thermal resistance characteristics if operating in high-power dissipation scenarios compared to lower-voltage alternatives.

Part Context

This part belongs to the family of high-voltage power transistors offered by onsemi. These devices are engineered to handle significant voltage drops while maintaining stable gain characteristics. They serve as critical components in power management architectures where isolation and breakdown voltage are primary design constraints.

Replacement Considerations

Consult official cross-reference guides for direct pin-compatible substitutes. Verify that any alternative device meets or exceeds the original collector-emitter voltage and current ratings. Ensure thermal performance metrics align with the existing heat sink design.

2N6497G2N6497G

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