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Product Detailed Parameters
- Description：250V 500MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：250 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 10V
- Power - Max：625 mW
- Frequency - Transition：200MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The 2N6515 APM PBFREE is an NPN silicon bipolar junction transistor manufactured by Central Semiconductor Corp. It is designed for high voltage driver and amplifier applications. The device features a collector-emitter voltage rating of 250 V and a continuous collector current capacity of 500 mA. It operates with a transition frequency of 200 MHz and dissipates up to 625 mW of power. The component utilizes a TO-92-3 through-hole package, providing a compact form factor suitable for various electronic circuit implementations requiring reliable high-voltage switching or amplification capabilities.
Feature Summary
- Complementary silicon construction optimized for high voltage operations
- Suitable for driver and amplifier circuit topologies
- Through-hole mounting configuration for standard PCB assembly
Applications
- High voltage driver circuits
- Amplifier stages
- General purpose switching applications
Procurement Notes
Verify the specific ordering suffix to confirm lead-free status and packaging type. Ensure the procurement channel provides official documentation from Central Semiconductor Corp. Confirm that the received components match the 2N6515 specification sheet regarding electrical ratings and physical dimensions before integration into production lines.
Selection Notes
Select this component when a high voltage NPN transistor is required for driver or amplifier roles. Consider the 250 V breakdown voltage and 500 mA current limits against circuit demands. Evaluate the TO-92-3 package constraints for thermal management and board space availability compared to alternative packages offering higher power dissipation.
Part Context
This part belongs to a series of complementary silicon transistors including the 2N6518 series. These devices are engineered together to support balanced high voltage performance in push-pull or differential configurations. The series targets applications demanding robust switching characteristics within a small footprint.
Replacement Considerations
Cross-reference with other NPN transistors rated for 250 V and similar current capabilities. Verify pinout compatibility and thermal resistance values when substituting with parts from different manufacturers to ensure circuit integrity.
