2N6515 APM TIN/LEAD

$0.14

Description：250V 500MA 625MW TH TRANSISTOR-S
Series：-

SKU:a880e38fc287 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N6515 APM TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 250V 500MA 625MW TH TRANSISTOR-S. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6515 APM TIN/LEAD

Description：250V 500MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：250 V
Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 10V
Power - Max：625 mW
Frequency - Transition：200MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N6515 APM TIN/LEAD

2N6515 APM TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N6515 APM TIN/LEAD is a single NPN silicon bipolar junction transistor (BJT) designed for high-voltage driver and amplifier applications. It features a collector-emitter voltage (VCEO) of 250 V, a collector-base voltage (VCBO) of 250 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a maximum DC collector current of 500 mA with a power dissipation rating of 625 mW. It exhibits a transition frequency (fT) of 200 MHz and a minimum DC current gain (hFE) of 35. Operating within a temperature range of -55°C to +150°C, it utilizes a TO-92-3 through-hole package.

Single Bipolar Transistors Feature Summary

Engineered for high-voltage driver and amplifier circuits using complementary silicon technology.
Provides robust performance with a 250 V breakdown voltage capability for demanding applications.
Supports continuous collector currents up to 500 mA in a standard through-hole form factor.

Single Bipolar Transistors Applications

High-voltage driver circuits
Linear amplifier stages
Complementary switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Central Semiconductor documentation to confirm lead-free status or tin/lead composition requirements. Confirm RoHS compliance details directly with the manufacturer datasheet, as regulatory status may vary by production batch. Ensure the TO-92-3 package dimensions match your PCB footprint constraints before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with moderate current handling is required for linear or switching operations. The 200 MHz transition frequency makes it suitable for RF oscillator or intermediate frequency amplifier roles where voltage swing is critical. Consider the 625 mW thermal limit and ensure adequate heatsinking or airflow if operating near maximum ratings.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor 2N6515 series, which includes complementary PNP devices such as the 2N6518. The series is specifically designed for high-voltage applications requiring matched characteristics between NPN and PNP counterparts. The APM suffix typically denotes an ammo pack packaging style, while TIN/LEAD indicates the terminal plating material.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers include 2N6515 TRE TIN/LEAD and 2N6515 APM PBFREE from Central Semiconductor Corp. These variants maintain identical electrical specifications but differ in packaging or lead composition. Verify pinout compatibility and thermal resistance values when substituting.