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Product Detailed Parameters
- Description：250V 500MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：250 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 10V
- Power - Max：625 mW
- Frequency - Transition：200MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6515 PBFREE is a silicon NPN bipolar junction transistor designed for high-voltage driver and amplifier applications. It features a collector-emitter voltage of 250 V, a continuous collector current of 500 mA, and a power dissipation rating of 625 mW. The device offers a gain bandwidth product of 200 MHz and operates within a temperature range of -65°C to +150°C. Packaged in a TO-92-3 through-hole configuration, it provides reliable performance for signal control and sensing circuits.
Feature Summary
- High-voltage capability with 250 V collector-emitter breakdown
- Broadband operation with 200 MHz gain bandwidth product
- Through-hole mounting in a compact TO-92-3 package
Applications
- High-voltage driver circuits
- Signal amplification stages
- Low-current switching applications
- Sensing circuit interfaces
Procurement Notes
Verify the exact datasheet version and electrical characteristics directly from the manufacturer's official documentation before integration. Confirm that the PBFREE suffix indicates lead-free compliance as specified by Central Semiconductor. Ensure thermal management aligns with the 625 mW power dissipation limit in your specific PCB layout design.
Selection Notes
Select this component when high-voltage handling up to 250 V is required alongside moderate current capacity. The 200 MHz bandwidth supports higher frequency signal processing compared to standard low-frequency transistors. Consider the TO-92-3 package constraints for thermal dissipation and mechanical mounting space in your assembly.
Part Context
This part belongs to the Central Semiconductor complementary silicon transistor series, which includes related NPN and PNP devices like the 2N6518. These components are engineered for robust performance in high-voltage environments. The 2N6515 specifically addresses the need for reliable NPN switching and amplification in compact through-hole designs.
Replacement Considerations
Consult official cross-reference data for verified substitutes. No confirmed public substitute part numbers are available in the provided documentation.
