2N6515

Overview

The onsemi 2N6515 is a high-voltage NPN silicon bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 250 Vdc and a continuous collector current capacity of 500 mAdc. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 625 mW at 25°C ambient temperature. Packaged in a TO-92 (Case 29) through-hole configuration, it offers a transition frequency of 200 MHz and a DC current gain ranging from 35 to 300 depending on operating conditions.

Feature Summary

• High voltage capability with a 250 Vdc collector-emitter breakdown rating suitable for demanding power environments
• Robust thermal performance allowing operation up to a maximum junction temperature of +150°C
• Fast switching characteristics with a transition frequency of 200 MHz for efficient signal processing

Applications

• High voltage switching circuits
• General purpose amplifiers
• Power supply regulation stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and lead times. Confirm RoHS compliance status as standard versions may differ from Pb-Free alternatives. Check availability constraints since distribution channels vary by region. Validate that the TO-92 package style matches your board layout requirements before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with moderate current handling capabilities. Ensure the thermal management strategy accounts for the 625 mW dissipation limit at ambient temperatures above 25°C. Verify that the base drive current remains within the 250 mAdc maximum rating during saturation operations to prevent device damage.

Part Context

This device belongs to the 2N65xx series of high-voltage transistors manufactured by onsemi. It shares the same TO-92 physical footprint and pinout configuration as related models like the 2N6517 and 2N6520, though electrical ratings such as breakdown voltage differ across the family. The series is engineered for reliable performance in industrial and consumer electronic applications requiring robust NPN switching elements.

Replacement Considerations

Direct substitutes include the 2N6517 and 2N6520, which share identical package dimensions and pin configurations but offer different voltage ratings. Verify that the replacement part meets or exceeds the required 250 V collector-emitter voltage and 500 mA current specifications for your specific application design.

FAQ

What is the maximum collector-emitter voltage for the 2N6515?

The maximum collector-emitter voltage (VCEO) is rated at 250 Vdc.

Does the 2N6515 support surface mount installation?

No, the 2N6515 is exclusively available in a TO-92 through-hole package.

What is the minimum DC current gain at low collector currents?

The minimum DC current gain (hFE) is specified as 35 at a collector current of 1.0 mAdc and VCE of 10 Vdc.