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The onsemi 2N6515RLRMG is a high-voltage NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage of 250V and a maximum continuous collector current of 500mA. The device is housed in a TO-92 surface-mount package, offering a compact form factor suitable for space-constrained designs. With a transition frequency of 200MHz and a power dissipation rating of 625mW, it provides reliable performance across an operating temperature range of -55°C to 150°C. This component is currently obsolete.
Verify availability through authorized distributors as this part is marked obsolete. Confirm that substitute components meet all electrical specifications, including voltage ratings and package dimensions. Ensure compliance with RoHS standards if required by the final assembly. Request updated lifecycle status documentation from the manufacturer before finalizing procurement plans.
Select this component for applications requiring high voltage isolation in a small footprint. Consider the 250V rating for safety margins in mains-related circuits. Evaluate thermal management requirements given the 625mW dissipation limit. Compare against newer equivalents if long-term supply stability is critical for the product lifecycle.
This transistor belongs to onsemi's high-voltage BJT family, often paired with complementary PNP devices like the 2N6520. The TO-92 package is standard for low-power discrete transistors. The RL suffix indicates a specific tape-and-reel or ammo-pack configuration for automated assembly processes.
Publicly confirmed substitutes include KSP43TA. Verify pinout compatibility and electrical parameters such as Vceo and Ic when replacing. Check datasheets for any differences in hFE or switching speeds.