Single Bipolar Transistors 2N6516 APM TIN/LEAD product image

2N6516 APM TIN/LEAD

$0.33
  • Description:300V 500MA 625MW TH TRANSISTOR-S
  • Series:-

SKU:befd11db9dcb Category: Brand:

  
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2N6516 APM TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 300V 500MA 625MW TH TRANSISTOR-S. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6516 APM TIN/LEAD

  • Description:300V 500MA 625MW TH TRANSISTOR-S
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:45 @ 10mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:40MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6516 APM TIN/LEAD

2N6516 APM TIN/LEAD

Single Bipolar Transistors Overview

The 2N6516 APM TIN/LEAD is an NPN epitaxial silicon bipolar junction transistor manufactured by Central Semiconductor Corp. It is designed for through-hole mounting in a TO-92-3 package. The device features a collector-emitter voltage rating of 300 V and a continuous collector current capacity of 500 mA. Thermal performance is defined by a maximum power dissipation of 625 mW. The component supports a transition frequency of 40 MHz, suitable for general-purpose switching and amplification applications requiring high voltage tolerance.

Single Bipolar Transistors Feature Summary

  • High voltage blocking capability for demanding circuit environments
  • Epitaxial silicon construction for reliable operation
  • Through-hole compatible leaded package design

Single Bipolar Transistors Applications

  • General purpose signal amplification
  • High voltage switching circuits
  • Power supply control stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to ensure compliance with material regulations. The inclusion of the TIN/LEAD designation indicates the presence of lead within the plating or alloy composition. Confirm that this material specification aligns with the environmental requirements of the target assembly. Request official documentation from authorized distributors to validate the exact manufacturing batch details and physical marking codes before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when the application requires an NPN transistor capable of handling 300 V collector-emitter voltage. Ensure the thermal management strategy accommodates the 625 mW power dissipation limit in the TO-92-3 package. Verify that the required collector current does not exceed 500 mA during peak operation. Consider the transition frequency specifications if the circuit involves high-speed signal processing or rapid switching transitions.

Single Bipolar Transistors Part Context

This part belongs to the family of small-signal bipolar transistors produced by Central Semiconductor Corp. It shares structural similarities with other devices in the series, such as the 2N6515 and 2N6517, which offer comparable electrical characteristics. The manufacturer provides both leaded and lead-free variants within this product line to accommodate different regulatory standards and assembly processes across various electronic manufacturing sectors.

Single Bipolar Transistors Replacement Considerations

Parametric equivalents are available from authorized suppliers. Verify pinout compatibility and electrical ratings against the original design specifications before substitution.

2N6516 APM TIN/LEAD2N6516 APM TIN/LEAD
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