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Product Detailed Parameters
- Description：350V 500MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：350 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 10V
- Power - Max：625 mW
- Frequency - Transition：40MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6517 TRE PBFREE is a high-voltage NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a collector-emitter voltage (VCEO) and collector-base voltage (VCBO) of 350 V, with a maximum continuous collector current of 500 mA. The device operates within a temperature range of -65°C to +150°C and has a power dissipation rating of 350 mW in an SOT-23 package.
Feature Summary
- High voltage capability with 350 V breakdown ratings for collector-emitter and collector-base configurations.
- Surface-mount construction utilizing the compact SOT-23 package format.
- Extended thermal operating range supporting environments from -65°C to +150°C.
Applications
- High voltage switching circuits
- General purpose amplification stages
- Industrial control systems requiring small form factor transistors
Procurement Notes
Verify the specific suffix 'TRE' against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Ensure the component designation matches the exact datasheet revision required for your design. Cross-reference the RoHS compliance status directly with the supplier's certification documents prior to integration.
Selection Notes
Select this component when a high-voltage NPN transistor is required in a surface-mount footprint. The 350 V rating distinguishes it from standard low-voltage signal transistors. Consider the 350 mW power dissipation limit and SOT-23 thermal characteristics during PCB layout planning to ensure reliable operation under load conditions.
Part Context
This part belongs to the Central Semiconductor BJT portfolio, specifically targeting high-voltage discrete applications. It serves as a surface-mount alternative to through-hole high-voltage transistors, allowing for denser circuit board layouts while maintaining robust electrical performance in demanding electronic environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters carefully if considering cross-brand alternatives.
