Single Bipolar Transistors 2N6517CTA product image

2N6517CTA

  • Description:TRANS NPN 400V 0.5A TO-92-3
  • Series:-

SKU:11eba407decf Category: Brand:

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2N6517CTA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 400V 0.5A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6517CTA

  • Description:TRANS NPN 400V 0.5A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Cut Tape (CT),Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):400 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 50mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6517CTA

2N6517CTA

Single Bipolar Transistors Overview

The onsemi 2N6517CTA is an NPN silicon epitaxial planar transistor housed in a TO-92 (TO-226) package. It features a collector-emitter voltage of 350 V and a continuous collector current of 500 mA. The device dissipates 625 mW at 25°C ambient temperature, with a junction-to-case thermal resistance of 83.3 °C/W. Electrical characteristics include a DC current gain ranging from 15 to 200 and a transition frequency of 200 MHz. Operating temperatures span from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • High voltage capability for robust operation in demanding circuits
  • Epitaxial silicon construction for reliable performance
  • Through-hole mounting configuration for standard board integration

Single Bipolar Transistors Applications

  • High voltage switching applications
  • Linear amplifier stages
  • Driver circuits requiring high breakdown voltage

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package style and shipping format. Confirm RoHS compliance status as indicated in the datasheet. Ensure the component meets environmental requirements for the intended deployment environment before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor requires a minimum collector-emitter voltage of 350 V. Evaluate the thermal management strategy based on the 625 mW dissipation limit at ambient conditions. Consider the transition frequency if high-speed signal processing is required within the circuit design parameters.

Single Bipolar Transistors Part Context

This part belongs to the 2N6515/2N6517 series of high voltage transistors manufactured by onsemi. The series includes complementary PNP devices such as the 2N6520. These components are designed for general-purpose high voltage applications utilizing standard through-hole packaging technologies.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the 350 V collector-emitter voltage rating and compatible pinout configuration.

2N6517CTA2N6517CTA

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