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The 2N6517RLRA is a high-voltage NPN silicon transistor manufactured by onsemi in the TO-92 package. It features a collector-emitter voltage of 350 Vdc and a continuous collector current of 500 mAdc. The device operates within a junction temperature range of -55 to +150 °C, with a total device dissipation of 625 mW at 25°C ambient. Electrical characteristics include a DC current gain ranging from 20 to 300 and a current-gain bandwidth product up to 200 MHz.
Verify the specific ordering suffix RLRA corresponds to the required tape and reel packaging configuration. Confirm that the component meets RoHS compliance requirements if applicable to your manufacturing process. Ensure the datasheet revision matches the design specifications before finalizing procurement orders.
Select this component when a high collector-emitter breakdown voltage exceeding 250 V is required alongside moderate current handling capabilities. Consider the thermal resistance characteristics and safe operating area limits for power dissipation management. Evaluate the switching speed parameters against the specific frequency requirements of the target application circuit.
This part belongs to the 2N65xx series of high voltage transistors, which also includes the 2N6515 and 2N6520 variants. The series provides both NPN and PNP options for complementary circuit designs. The 2N6517 specifically offers higher voltage ratings compared to the 2N6515 while sharing similar physical packaging dimensions.
The 2N6515 serves as a lower voltage alternative within the same series. The 2N6520 is the complementary PNP version designed for use in matching configurations.