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Product Detailed Parameters
- Description：250V 500MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：250 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 10V
- Power - Max：625 mW
- Frequency - Transition：40MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N6518 TRE TIN/LEAD is a silicon NPN general-purpose transistor housed in a TO-92 package. It features a collector-emitter voltage (VCEO) of 40 V and a collector-base voltage (VCBO) of 50 V. The device supports a continuous collector current of 600 mA with a power dissipation rating of 625 mW. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 at specified test conditions, a transition frequency (fT) of 150 MHz, and an emitter-base breakdown voltage (VEBO) of 6 V. The component operates within a temperature range of -65°C to +150°C.
Feature Summary
- High-frequency performance suitable for RF amplification applications
- Robust thermal stability across extended industrial temperature ranges
- General-purpose switching capability with moderate current handling
Applications
- RF amplifier stages in communication equipment
- General-purpose signal switching circuits
- Audio pre-amplifier designs
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm lead plating composition. Confirm RoHS compliance status directly with the supplier as regulatory requirements may vary by production batch. Ensure the requested packaging format matches the design requirements for automated assembly or manual insertion processes.
Selection Notes
Select this component when a standard NPN silicon transistor with moderate power handling and high-frequency response is required. Compare hFE specifications against circuit biasing requirements to ensure adequate gain margins. Verify that the TO-92 package dimensions fit the available PCB real estate and thermal management constraints.
Part Context
This part belongs to the Central Semiconductor small-signal bipolar junction transistor family. It serves as a discrete active element for linear and switching operations. The device complements other general-purpose transistors in the portfolio, offering a balance between voltage rating and current capacity for versatile electronic design implementations.
Replacement Considerations
Consult official substitution guides for equivalent NPN transistors with matching VCEO, IC, and package specifications. Verify pinout compatibility before implementation. Cross-reference datasheets to ensure functional equivalence in terms of gain bandwidth and thermal limits.
