2N6519 APM TIN/LEAD

$0.33

Description：300V 500MA 625MW TH TRANSISTOR-S
Series：-

SKU:ca49397b3a05 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N6519 APM TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 300V 500MA 625MW TH TRANSISTOR-S. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6519 APM TIN/LEAD

Description：300V 500MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：PNP
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：300 V
Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：45 @ 30mA, 10V
Power - Max：625 mW
Frequency - Transition：200MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N6519 APM TIN/LEAD

2N6519 APM TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N6519 APM TIN/LEAD is a PNP silicon small-signal bipolar junction transistor (BJT) housed in a TO-92 through-hole package. It features a maximum collector current of 0.5A and a collector-emitter breakdown voltage of 300V. The device has a power dissipation rating of 1.5W, a minimum DC current gain of 20, and operates within a temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

High voltage capability with a 300V collector-emitter breakdown rating suitable for demanding switching applications.
Robust thermal performance allowing operation up to a maximum junction temperature of 150°C.
Designed as a general-purpose amplifier or switch with a 0.5A continuous collector current capacity.

Single Bipolar Transistors Applications

General-purpose signal amplification circuits
Electronic switching applications requiring high voltage isolation
Power supply control stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm lead-free tin plating specifications. Confirm availability status directly with authorized distributors, as this component may be subject to discontinuation notices or limited production runs. Ensure the requested packaging matches the required manufacturing process.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 300V collector-emitter voltage rating is required. Verify that the 0.5A collector current limit meets the circuit load requirements. Consider the TO-92 package constraints for board space and thermal management needs relative to the 1.5W power dissipation capability.

Single Bipolar Transistors Part Context

This part belongs to the standard discrete semiconductor transistor family manufactured by Central Semiconductor Corp. It utilizes silicon planar technology and is designed for through-hole mounting. The component serves as a fundamental active element for analog and digital signal processing tasks in electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for verified substitutes. Potential equivalents include other PNP transistors with comparable Vceo and Ic ratings, such as the 2N6517 or 2N6518 series, provided pinout compatibility and electrical parameters align with the design requirements.