Single Bipolar Transistors 2N6519 TIN/LEAD product image

2N6519 TIN/LEAD

$0.31
  • Description:300V 500MA 625MW TH TRANSISTOR-S
  • Series:-

SKU:d2a64d6ce35e Category: Brand:

  
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2N6519 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 300V 500MA 625MW TH TRANSISTOR-S. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N6519 TIN/LEAD

  • Description:300V 500MA 625MW TH TRANSISTOR-S
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:45 @ 30mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N6519 TIN/LEAD

2N6519 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N6519 TIN/LEAD is a PNP epitaxial silicon small-signal bipolar junction transistor designed for high-voltage applications. It features a collector-base voltage rating of 300V and a collector-emitter voltage of 300V, with an emitter-base voltage of 6.0V. The device supports a continuous collector current of 500mA and dissipates up to 625mW of power. Operating at frequencies up to 200MHz, it utilizes a TO-92-3 through-hole package with tin/lead terminations.

Single Bipolar Transistors Feature Summary

  • High voltage capability with 300V ratings for collector-base and collector-emitter voltages
  • Epitaxial silicon construction optimized for small-signal switching and amplification
  • Through-hole TO-92-3 package design suitable for standard PCB mounting

Single Bipolar Transistors Applications

  • High voltage switching circuits
  • Small signal amplification stages
  • General purpose electronic circuitry requiring PNP topology

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (e.g., APM) against the required tape-and-reel or bulk packaging configuration. Confirm that the tin/lead finish meets project compliance requirements. Ensure the selected variant matches the exact electrical specifications documented in the official datasheet before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 300V breakdown voltage is required in a low-power environment. The 500mA current rating and 625mW power dissipation define its thermal limits. Consider the TO-92-3 form factor for manual assembly or automated through-hole processes where surface mount alternatives are unsuitable.

Single Bipolar Transistors Part Context

This part belongs to the family of high-voltage PNP transistors manufactured by Central Semiconductor Corp. It shares structural similarities with other devices in the series but is distinguished by its specific 300V voltage ratings and 500mA current capacity. The tin/lead termination ensures compatibility with traditional soldering methods.

Single Bipolar Transistors Replacement Considerations

The Fairchild Semiconductor 2N6518 serves as a related alternative within the same product family. Verify that the substitute maintains equivalent voltage and current ratings for the intended application.

2N6519 TIN/LEAD2N6519 TIN/LEAD
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