2N6520TA

Single Bipolar Transistors Overview

The onsemi 2N6520TA is a PNP silicon epitaxial planar transistor designed for high-voltage applications. It features a collector-emitter voltage (VCEO) of 350 V and a continuous collector current (IC) of 500 mA. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 625 mW at 25°C ambient. Key electrical characteristics include a DC current gain (hFE) ranging from 20 to 300, a transition frequency (fT) of 40 MHz minimum, and a collector-base breakdown voltage (VCBO) of 350 V. It utilizes a TO-92 package with kinked leads.

Single Bipolar Transistors Feature Summary

• High voltage capability with 350 V collector-emitter and collector-base ratings
• Suitable for switching and linear amplifier applications in harsh environments
• Lead-free construction compliant with environmental standards

Single Bipolar Transistors Applications

• High voltage switching circuits
• Linear amplifier stages
• General purpose discrete semiconductor applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type, as variations exist between Ammo Pack, Tape & Reel, and Bulk configurations. Ensure the component meets RoHS requirements if applicable to your assembly process. Confirm pinout alignment with Case 29 Style 1 (Emitter, Base, Collector) before integration into printed circuit board designs.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor requires high voltage blocking capabilities exceeding standard low-voltage devices. Consider the thermal resistance and power dissipation limits relative to the expected operating temperature. Verify that the required current gain falls within the specified hFE ranges for the intended bias conditions.

Single Bipolar Transistors Part Context

The 2N6520TA belongs to the 2N65xx series of high-voltage transistors manufactured by onsemi. This series includes complementary NPN variants such as the 2N6515 and 2N6517. These devices share similar structural characteristics but differ in polarity and specific voltage ratings, allowing for flexible design options in high-voltage discrete circuits.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include the 2N6517BU and 2N6517TA, though these are NPN types requiring circuit polarity adjustments. Other manufacturers may offer equivalent PNP high-voltage transistors, but verification of pinout compatibility and absolute maximum ratings is essential.