2N6560

Single Bipolar Transistors Overview

The 2N6560 is a silicon NPN power transistor manufactured by Microchip Technology, housed in a hermetically sealed TO-3 metal package. It is designed for high-voltage applications with a collector-emitter voltage rating of 450V and a maximum collector current of 10A. The device features a transition frequency of 10 MHz and supports a maximum power dissipation of 220W. Constructed from silicon material, this bipolar junction transistor utilizes through-hole mounting for robust integration into industrial and power electronics circuits requiring reliable high-power switching capabilities.

Single Bipolar Transistors Feature Summary

• Hermetically sealed TO-3 metal package construction
• High voltage capability exceeding 400V collector-emitter rating
• Silicon NPN polarity design for power switching
• Through-hole mounting configuration

Single Bipolar Transistors Applications

• Industrial power control systems
• High-voltage switching circuits
• Power amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation carefully as the 2N6560 part number appears across multiple vendors including SSDI, Seme LAB, and Inchange Semiconductor. Confirm that the specific lot matches Microchip Technology specifications if required. Ensure the TO-3 package dimensions and pinout align with the target circuit board layout before finalizing procurement orders to avoid compatibility issues.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with significant current handling capacity is required. The 450V rating and 10A current limit make it suitable for demanding power applications. Consider the TO-3 package size and thermal management requirements during the design phase. Compare against other high-voltage options if space constraints or different mounting styles are necessary for the specific implementation.

Single Bipolar Transistors Part Context

The 2N6560 belongs to the category of bipolar NPN power transistors. It is functionally comparable to devices like the KT878A and 2SC1228 in terms of voltage and current ratings. These components share similar hermetically sealed metal package characteristics and are utilized in high-power environments where reliability and voltage withstand are critical performance factors.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitutes include the KT878A and 2SC1228. Verify electrical parameters such as Vceo and Ic limits match the original design requirements before substitution.