2N657A TIN/LEAD

Single Bipolar Transistors Overview

The 2N657A TIN/LEAD is an NPN silicon power transistor manufactured by Central Semiconductor Corp. It features a TO-3 metal package with tin/lead terminal finish. Key electrical ratings include a collector-emitter voltage (Vceo) of 80 V, a collector-base voltage (Vcbo) of 100 V, and an emitter-base voltage (Vebo) of 6.0 V. The device supports a continuous collector current of 10 A and dissipates up to 800 mW of power. It utilizes a single configuration suitable for through-hole mounting.

Single Bipolar Transistors Feature Summary

• High-current capability with 10 A collector current rating
• Robust metal TO-3 package construction
• Tin/lead plated terminals for specific soldering requirements

Single Bipolar Transistors Applications

• Power amplifier circuits
• Voltage regulator designs
• Switching applications requiring high current handling

Single Bipolar Transistors Procurement Notes

Verify the presence of the TIN/LEAD suffix when ordering to ensure compliance with specific plating requirements. Confirm that the manufacturer's standard lead time of approximately 18 weeks aligns with project schedules. Ensure the TO-3 package dimensions match the target PCB or chassis layout constraints before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for applications necessitating high current capacity in a rugged metal package. Compare the 80 V Vceo rating against circuit voltage peaks to ensure adequate safety margins. Evaluate thermal management needs given the 800 mW dissipation limit and consider heat sinking solutions appropriate for the TO-3 form factor.

Single Bipolar Transistors Part Context

This part belongs to the 2N657 series of NPN silicon power transistors produced by Central Semiconductor Corp. The series is characterized by its use in medium-to-high power electronic systems. The specific variant includes tin/lead plating, distinguishing it from lead-free alternatives within the same product family.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other 10 A NPN power transistors in TO-3 packages. Verify compatibility of pinout configurations and thermal resistance values. Ensure substitute components meet or exceed the 80 V collector-emitter voltage requirement.