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2N657A is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SMALL-SIGNAL BJT. Review the specifications below when checking this part for your BOM.
The 2N657A is an NPN silicon epitaxial planar transistor manufactured by Microchip Technology. It is housed in a TO-39 metal can package designed for through-hole mounting. The device features a collector-emitter voltage rating of 100 V and a continuous collector current capacity of 1 A. Key electrical characteristics include a DC current gain (hFE) ranging from 10 to 70 at a collector current of 150 mA, and a transition frequency (fT) of 50 MHz. Power dissipation is rated at 800 mW under specific thermal conditions.
Verify the manufacturer origin carefully, as Central Semiconductor also produces this part number. Confirm RoHS compliance status, as tin/lead variants exist alongside lead-free options. Ensure the TO-39 package dimensions match your PCB footprint requirements before finalizing procurement orders.
Select this component when a ruggedized metal package is required for high-voltage NPN switching. Compare hFE ranges against circuit biasing needs. Consider thermal management strategies given the 800 mW power dissipation limit in the TO-39 housing for sustained operations.
This part belongs to the standard NPN small-signal transistor family. It serves as a discrete active element for signal amplification and switching. The TO-39 package distinguishes it from modern surface-mount alternatives, offering superior heat dissipation and mechanical stability for industrial environments.
Direct substitutes include the 2N657 series equivalents. Verify pinout compatibility and electrical parameter overlaps such as VCEO and IC ratings. Cross-reference datasheets from Central Semiconductor or Motorola for dimensional and functional equivalence.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.