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Product Detailed Parameters
- Description：SOT-223 N-CHANNEL POWER MOSFETS
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：2A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：311 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
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Overview
The UMW 2N65G is an N-channel enhancement mode MOSFET designed for general-purpose switching applications. It features a drain-source voltage (VDS) rating of 650V and a continuous drain current (ID) of 2A at 25°C. The device has a maximum gate-source voltage (VGS) of ±30V and a typical on-resistance (RDS(on)) of 4.5Ω at VGS=10V and ID=1A. Packaged in SOT-223, it supports a junction temperature up to +150°C and offers low thermal resistance for efficient heat dissipation.
Feature Summary
- High breakdown voltage capability suitable for high-voltage switching circuits
- Enhanced mode operation with fast switching characteristics
- Robust packaging design for effective thermal management
Applications
- High-voltage power supply circuits
- Motor control systems
- General-purpose switching applications
Procurement Notes
Verify the specific datasheet version from UMW Youtai Semiconductor to confirm exact electrical parameters and mechanical dimensions. Ensure compatibility with your circuit's voltage and current requirements before integration. Check for any specific handling or storage instructions related to ESD sensitivity. Confirm package type matches your PCB footprint requirements.
Selection Notes
Select this component when a 650V N-channel MOSFET with moderate current handling is required. Consider the RDS(on) value for conduction loss calculations. Evaluate thermal performance based on expected power dissipation and ambient conditions. Compare with alternative packages if space constraints exist.
Part Context
This part belongs to UMW's discrete semiconductor lineup, specifically within their MOSFET category. It is manufactured by UMW Youtai Semiconductor, a provider of electronic components. The SOT-223 package is common for surface-mount applications requiring higher power than smaller SMD packages but less than through-hole options.
Replacement Considerations
Check for direct pin-compatible alternatives with similar VDS, ID, and RDS(on) specifications. Verify that any substitute maintains the same N-channel configuration and enhancement mode operation. Ensure thermal characteristics are comparable to avoid overheating issues.
