2N6660

$13.52

Description：MOSFET N-CH 60V 410MA TO39
Series：-
Mfr：Microchip Technology
Package：Bag

SKU:f7f2d853dde2 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 410MA TO39
Series：-
Mfr：Microchip Technology
Package：Bag
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 24 V
FET Feature：-
Power Dissipation (Max)：6.25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-39
Package / Case：TO-205AD, TO-39-3 Metal Can

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2N6660

Overview

The Microchip Technology 2N6660 is an N-Channel, Enhancement-Mode Vertical DMOS FET housed in a TO-39 package. It features a drain-to-source breakdown voltage of 60 V and a maximum static on-state resistance of 3.0 Ω at VGS=10V. The device supports a continuous drain current of 1.5 A and a pulsed current of 3.0 A. Operating temperatures range from -55°C to +150°C with a power dissipation rating of 6.25 W.

Feature Summary

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Fast switching speeds

Applications

Motor controls
Converters
Amplifiers
Switches
Power supply circuits

Procurement Notes

Verify the component against datasheet DS20005509A to confirm it matches the specified vertical DMOS structure and enhancement-mode characteristics. Ensure the physical package corresponds to the standard TO-39 configuration. Confirm that the manufacturer designation aligns with Microchip Technology specifications before finalizing procurement.

Selection Notes

Select this component for applications requiring high input impedance and fast switching capabilities. The low threshold voltage and positive temperature coefficient make it suitable for driving loads such as relays, solenoids, and bipolar transistors. Evaluate thermal stability requirements to ensure operation within the specified junction temperature limits.

Part Context

This part belongs to the family of N-Channel Enhancement-Mode Vertical DMOS FETs manufactured by Microchip Technology. It utilizes a silicon-gate manufacturing process designed to provide the power-handling capabilities of bipolar transistors combined with the high input impedance inherent in MOS devices.