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Product Detailed Parameters
- Description：MOSFET N-CH 60V 990MA TO205AD
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：990mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：725mW (Ta), 6.25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-205AD (TO-39)
- Package / Case：TO-205AD, TO-39-3 Metal Can
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Overview
The Vishay Siliconix 2N6660 is a military-qualified N-channel power MOSFET housed in a TO-205AD (TO-39) package. It features a drain-source voltage of 60 V and a gate-source voltage rating of ±20 V. The device exhibits a low on-resistance of 1.3 Ω at VGS = 10 V and a threshold voltage of 1.7 V. Key dynamic parameters include an input capacitance of 35 pF and fast switching speeds with turn-on and turn-off times of approximately 8 ns. Continuous drain current reaches 0.99 A at 25 °C case temperature, while pulsed drain current supports up to 3 A.
Feature Summary
- Military qualified for guaranteed reliability in high-reliability systems
- Low on-resistance and low threshold voltage enable low offset voltage and easy driving without buffers
- Fast switching speed suitable for high-speed circuits
- Direct logic-level interface capability with TTL/CMOS standards
Applications
- High-reliability systems
- Solid-state relays
- Battery-operated systems
- Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors
Procurement Notes
Verify the specific ordering suffix against the manufacturer's documentation to confirm lead type and qualification level. Standard commercial versions are available as 2N6660 or 2N6660-E3. Military variants such as JANTX and JANTXV require distinct part numbers like 2N6660JTX02 or 2N6660JTVP02. Confirm package dimensions and pinout compatibility before integration into existing designs.
Selection Notes
Select this component for applications requiring robust performance in harsh environments due to its military qualification. The low threshold voltage facilitates direct interfacing with standard logic families, eliminating the need for additional buffer stages. Ensure thermal management accounts for the junction-to-ambient resistance when operating without a heatsink, particularly for continuous duty cycles exceeding the rated limits.
Part Context
This device belongs to the Vishay Siliconix family of N-channel MOSFETs designed for general-purpose switching and amplification. It shares the TO-205AD hermetic ceramic package with other ruggedized variants in the series. The product line includes commercial and military-grade options, offering flexibility for different reliability requirements across various electronic systems.
Replacement Considerations
Compatible substitutes include the 2N6660-2, 2N6660JANTX, and 2N6660JANTXV. Verify that alternative parts match the TO-205AD footprint and electrical characteristics, specifically the 60 V breakdown voltage and on-resistance values.
