SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Vishay Siliconix 2N6660JTX02 is a military-qualified N-channel power MOSFET housed in a hermetically sealed TO-205AD (TO-39) package. It features a Drain-Source Voltage of 60 V and a Gate-Source Voltage rating of ±20 V. The device exhibits a maximum Drain-Source On-State Resistance of 3 Ω at VGS = 10 V and a typical Forward Transconductance of 350 mS. Switching performance includes a typical Turn-On Time of 8 ns and Turn-Off Time of 8.5 ns. Maximum Power Dissipation reaches 6.25 W at TC = 25 °C, with an operating junction temperature range from -55 °C to +150 °C.
Verify the specific ordering suffix JTX02 corresponds to standard gold leads as defined in the manufacturer's ordering information table. Confirm that the component meets all required MIL-PRF-19500 screening levels and environmental specifications for the intended deployment environment before finalizing procurement.
Select this component when military reliability standards are mandatory and hermetic sealing is required. Ensure the application voltage does not exceed the 60 V drain-source limit. Verify that the thermal management design can handle the specified power dissipation limits within the -55 °C to +150 °C operating temperature range.
This part belongs to the Vishay Siliconix 2N6660 family of N-channel 60 V MOSFETs. It shares core electrical characteristics with commercial variants like the 2N6660 but undergoes rigorous screening to meet DSCC qualifications. The JTX02 designation specifically identifies the JANTX grade configuration with standard gold leads.
Compatible substitutes include 2N6660JANTXV02 for higher reliability grades and 2N6660JTXL02 if solderable leads are required instead of standard gold leads.