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Product Detailed Parameters
- Description：MOSFET N-CH 60V 990MA TO205AD
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：990mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：725mW (Ta), 6.25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Military
- Qualification：MIL-PRF-19500
- Mounting Type：Through Hole
- Supplier Device Package：TO-205AD (TO-39)
- Package / Case：TO-205AD, TO-39-3 Metal Can
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Overview
The Vishay Siliconix 2N6660JTXL02 is a military-qualified N-channel power MOSFET housed in the TO-205AD (TO-39) package. It features a Drain-Source Voltage (VDS) of 60 V and a Gate-Source Voltage (VGS) rating of ±20 V. The device provides a maximum continuous drain current of 0.99 A at 25 °C case temperature, with a pulsed drain current capability of 3 A. Maximum power dissipation reaches 6.25 W at 25 °C. Key electrical parameters include a typical on-resistance (RDS(on)) of 1.3 Ω at VGS = 10 V, a threshold voltage (VGS(th)) of 1.7 V, and an input capacitance of 35 pF.
Feature Summary
- Military qualification compliant with DSCC screening standards for high-reliability applications
- Low on-resistance and low threshold voltage enabling direct logic-level interface without buffer circuits
- Fast switching speed and low input/output leakage characteristics suitable for high-speed circuit designs
Applications
- High-reliability systems requiring guaranteed component performance
- Direct logic-level interface circuits compatible with TTL or CMOS standards
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
- Solid-state relay implementations
- Battery-operated systems prioritizing low offset voltage and low-voltage operation
Procurement Notes
Verify that the specific ordering suffix L02 corresponds to JANTX2N6660 with solderable leads as defined in the official Vishay datasheet. Confirm that the component meets all required MIL-PRF-19500 screening levels for your intended application. Ensure compatibility with the TO-205AD (TO-39) package dimensions and lead configurations before finalizing procurement specifications.
Selection Notes
Select this component when military-grade reliability and fast switching speeds are critical requirements. The low threshold voltage allows for efficient driving from standard logic families, eliminating the need for additional buffer stages. Consider the thermal resistance and power dissipation limits relative to your operating environment to ensure stable performance under continuous load conditions.
Part Context
This part belongs to the Vishay Siliconix 2N6660 family of N-channel 60 V MOSFETs. The family includes commercial variants like the 2N6660-E3 and other military grades such as 2N6660JANTX and 2N6660JANTXV. All variants share the same core silicon die and electrical characteristics but differ in manufacturing screening and lead finish options to meet specific reliability standards.
Replacement Considerations
Compatible substitutes within the same family include 2N6660JANTX and 2N6660JANTXV. Verify that any replacement maintains the required military qualification level and matches the TO-205AD package footprint. Ensure the substitute part supports the necessary lead finish specifications if solderability is a constraint.
