2N6661-2

2N6661-2

$104.13
  • Description:MOSFET N-CH 90V 860MA TO39
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube

SKU:5aa6ebcfe3c1 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 90V 860MA TO39
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):90 V
  • Current - Continuous Drain (Id) @ 25°C:860mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):725mW (Ta), 6.25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-39
  • Package / Case:TO-205AD, TO-39-3 Metal Can

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2N6661-2

Overview

The Vishay Siliconix 2N6661-2 is a military-qualified N-channel enhancement-mode MOSFET housed in a TO-205AD (TO-39) metal can package. It features a drain-source breakdown voltage of 90 V and a continuous drain current of 0.86 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 4 Ω at VGS = 10 V, with a typical gate threshold voltage of 1.6 V. Key dynamic parameters include an input capacitance of 35 pF and switching times of approximately 6 ns turn-on and 8 ns turn-off.

Feature Summary

  • Military qualification for high-reliability applications
  • Low threshold voltage enabling direct logic-level interface
  • Fast switching speed suitable for high-speed circuits
  • Metal case construction with drain connected to the tab

Applications

  • High-reliability systems
  • Direct logic-level interface with TTL or CMOS
  • Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
  • Battery-operated systems
  • Solid-state relays

Procurement Notes

Verify that the specific ordering suffix matches the required lead finish and manufacturing flow. Confirm compliance with the -2 flow document for this variant. Check RoHS status and ensure the component meets the necessary military specifications for your intended deployment environment before finalizing procurement.

Selection Notes

Select this component when military-grade reliability and low offset voltage are required. Ensure the application operates within the 90 V drain-source limit and 0.86 A continuous current rating. Verify that the thermal management strategy accommodates the specified junction-to-case thermal resistance for the expected power dissipation levels.

Part Context

This part belongs to the Vishay Siliconix family of N-channel 90 V MOSFETs, which includes commercial variants like the 2N6661 and JANTX/JANTXV radiation-hardened versions. All share the same core electrical characteristics but differ in qualification standards, lead finishes, and manufacturing traceability requirements defined by their respective ordering suffixes.

Replacement Considerations

Cross-reference with JAN2N6661 or 2N6661JANTX for equivalent electrical performance. Verify pinout compatibility in the TO-205AD package. Confirm that the substitute part meets the specific military qualification and environmental testing requirements mandated by the original design.

FAQ

Is the drain terminal electrically connected to the package case?

Yes, the datasheet specifies that the drain is electrically connected to the case.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.

Does the device include a built-in body diode?

Yes, the specifications list a forward voltage for the intrinsic diode, confirming its presence.

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