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Product Detailed Parameters
- Description：MOSFET N-CH 90V 860MA TO39
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：90 V
- Current - Continuous Drain (Id) @ 25°C：860mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：725mW (Ta), 6.25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Military
- Qualification：MIL-PRF-19500
- Mounting Type：Through Hole
- Supplier Device Package：TO-39
- Package / Case：TO-205AD, TO-39-3 Metal Can
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Overview
The Vishay Siliconix 2N6661JAN02 is a military-qualified N-channel silicon MOSFET housed in a TO-205AD (TO-39) metal can package. It features a drain-source breakdown voltage of 90 V and a continuous drain current rating of 0.86 A at 25 °C case temperature. The device exhibits a low on-resistance of 4 Ω at VGS = 10 V, a typical gate threshold voltage of 1.6 V, and an input capacitance of 35 pF. Switching performance includes turn-on and turn-off times of approximately 6 ns and 8 ns respectively. Maximum power dissipation reaches 6.25 W at 25 °C case temperature.
Feature Summary
- Military qualified for high-reliability applications
- Low offset voltage and low error voltage operation
- Fast switching speed with low input capacitance
- Direct logic-level interface capability without buffer
Applications
- High-reliability systems
- TTL/CMOS direct logic-level interfaces
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
- Battery-operated systems
- Solid-state relays
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead type, solderability, or PIND testing requirements. Confirm RoHS compliance status as military variants may differ from commercial equivalents. Validate that the TO-205AD package dimensions match the design footprint. Ensure the component meets the required MIL-PRF specifications for the intended environment.
Selection Notes
Select this component when military qualification and guaranteed reliability are mandatory. The low threshold voltage facilitates direct interfacing with standard logic families. Consider the thermal resistance and power dissipation limits for heat management. Verify that the 90 V drain-source voltage provides adequate margin for the application's peak operating conditions.
Part Context
This part belongs to the Vishay Siliconix 2N6661 family of N-channel enhancement mode MOSFETs. It shares core electrical characteristics with commercial versions like the 2N6661 but undergoes stricter screening processes. The TO-205AD package provides a hermetically sealed metal enclosure suitable for harsh environments. The JANTX designation indicates a specific military grade within the broader product line.
Replacement Considerations
Cross-reference with JAN2N6661 or other DSCC-qualified equivalents. Verify pinout compatibility and package dimensions before substitution. Ensure replacement parts meet the same military specification requirements.
