2N6661JTVP02

$363.38

Description：MOSFET N-CH 90V 860MA TO39
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:d5f7ac8db91b Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 90V 860MA TO39
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：90 V
Current - Continuous Drain (Id) @ 25°C：860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：725mW (Ta), 6.25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Military
Qualification：MIL-PRF-19500
Mounting Type：Through Hole
Supplier Device Package：TO-39
Package / Case：TO-205AD, TO-39-3 Metal Can

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2N6661JTVP02

Overview

The Vishay Siliconix 2N6661JTVP02 is a military-qualified N-channel power MOSFET featuring a 90 V drain-source voltage rating and a maximum continuous drain current of 0.86 A at 25 °C case temperature. It utilizes a TO-205AD (TO-39) metal can package with three pins. The device exhibits a low on-resistance of 4 Ω at VGS = 10 V, a threshold voltage of 1.6 V, and fast switching speeds with turn-on and turn-off times of approximately 6 ns and 8 ns respectively.

Feature Summary

Military qualification compliant with MIL-PRF-19500 standards for high reliability
Low gate threshold voltage enabling direct logic-level interface without buffer amplifiers
Fast switching speed suitable for high-speed circuit applications
Metal can package providing robust physical protection

Applications

High-reliability systems
Direct logic-level interface circuits
Solid-state relays
Battery-operated systems

Procurement Notes

Verify the specific ordering suffix JTVP02 corresponds to JANTXV2N6661P with PIND screening as documented in the official datasheet. Confirm that the component meets all required environmental and electrical specifications for the intended application before procurement.

Selection Notes

Select this component for applications requiring military-grade reliability and fast switching capabilities. Ensure the design accommodates the 90 V drain-source voltage limit and the thermal constraints associated with the TO-205AD package. Verify compatibility with the required logic levels due to the low threshold voltage specification.

Part Context

This part belongs to the Vishay Siliconix 2N6661 series of N-channel 90 V MOSFETs. The series includes commercial variants and various military grades such as JANTX and JANTXV. The 2N6661JTVP02 represents a specific military configuration within this family.