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Product Detailed Parameters
- Description：MOSFET N-CH 90V 860MA TO39
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：90 V
- Current - Continuous Drain (Id) @ 25°C：860mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：725mW (Ta), 6.25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Military
- Qualification：MIL-PRF-19500
- Mounting Type：Through Hole
- Supplier Device Package：TO-39
- Package / Case：TO-205AD, TO-39-3 Metal Can
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Overview
The Vishay Siliconix 2N6661JTXV02 is a military-qualified N-channel power MOSFET housed in a sealed TO-205AD (TO-39) package. It features a drain-source voltage of 90 V and a maximum continuous drain current of 0.86 A at 25 °C case temperature. The device exhibits a low on-resistance of 4 Ω at VGS = 10 V, a gate threshold voltage of 1.6 V, and an input capacitance of 35 pF. Switching times are rated at 6 ns turn-on and 8 ns turn-off. Operating junction temperatures range from -55 °C to 150 °C.
Feature Summary
- Military qualification compliant with MIL-PRF-19500 standards for high reliability
- Low threshold voltage enabling direct logic-level interface without buffer circuits
- Fast switching speeds suitable for high-speed circuit applications
- Sealed metal cylindrical package designed for harsh environments
Applications
- High-reliability systems
- Solid-state relays
- Direct logic-level interface circuits
- Battery-operated systems
Procurement Notes
Verify the specific ordering suffix JTXV02 corresponds to the JANTXV grade with standard gold leads as defined in the manufacturer's ordering table. Confirm that the component meets the screening requirements of MIL-PRF-19500 for discrete components used in critical avionics or military systems. Ensure the TO-205AD package dimensions align with the mechanical constraints of the target assembly.
Selection Notes
Select this component when a hermetically sealed N-channel MOSFET with military-grade reliability is required. The 90 V rating and 0.86 A current capability suit moderate-power switching tasks. The low threshold voltage facilitates direct driving by TTL or CMOS logic families. Consider the thermal resistance characteristics for heat dissipation planning in enclosed metal packages.
Part Context
This part belongs to the Vishay Siliconix family of N-channel 90 V MOSFETs, which includes commercial variants like the 2N6661 and other military grades such as the 2N6661JANTX. All variants share the same electrical specifications but differ in manufacturing screening and lead configurations according to their specific military or commercial designations.
Replacement Considerations
Substitutes must match the N-channel configuration, 90 V minimum breakdown voltage, and TO-205AD (TO-39) package form factor. Verify that any alternative device meets the same MIL-PRF-19500 screening levels if military qualification is mandatory for the application.
